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FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00004-1v0-E
Memory FRAM
1 M Bit (64 K × 16)
MB85R1002A
■ DESCRIPTIONS
The MB85R1002A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words ×
16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
technologies.
The MB85R1002A is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002A can be used for 10 10 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E 2 PROM.
The MB85R1002A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
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Bit configuration
Read/write endurance
Operating power supply voltage
Operating temperature range
Data retention
LB and UB data byte control
Package
: 65,536 words × 16 bits
: 10 10 times
: 3.0 V to 3.6 V
: ? 40 °C to + 85 °C
: 10 years ( + 55 ° C)
: 48-pin plastic TSOP (1)
Copyright?2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
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